Скачать даташит для l2sc3356lt1g_l2sc3356lt3g:

DATA SHEET LESHAN RADIO COMPANY, LTD. L2SC3356LT1G DESCRIPTION The L2SC3356LT1 is an NPN silicon epitaxial transistor designed for S-L2SC3356LT1G low noise amplifier at VHF, UHF and CATV band. It has dynamic range and good current characteristic. 3 S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. ORDERING INFORMATION 1 2 Shipping Device Marking SOT-23 L2SC3356LT1G R24 3000/Tape & Reel S-L2SC3356LT1G L2SC3356LT3G 10000/Tape & Reel R24 S-L2SC3356LT3G FEATURES We declare that the material of product compliance with RoHS requirements. Low Noise and High Gain NF = 1.1 dB TYP., Ga = 11 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz High Power Gain MAG = 13 dB TYP. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz ABSOLUTE MAXIMUM RATINGS (TA = 25 C) Collector to Base Volta