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MMG150S120B6TN 1200V 150A IGBT Module April 2015 Version 01 RoHS Compliant PRODUCT FEATURES IGBT3 CHIP(Trench+Field Stop technology) High short circuit capability,self limiting short circuit current VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Low switching losses APPLICATIONS High frequency switching application Medical applications Motion/servo control UPS systems IGBT-inverter ABSOLUTE MAXIMUM RATINGS T =25 C unless otherwise specified C Symbol Parameter/Test Conditions Values Unit VCES Collector Emitter Voltage TJ=25 1200 V VGES Gate Emitter Voltage 20 TC=25 200 IC DC Collector Current TC=80 150 A ICM Repetitive Peak Collector Current tp=1ms 300 Ptot Power Dissipation Per IGBT 650 W Diode-inverter ABSOLUTE
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mmg150s120b6tn.pdf Проектирование, MOSFET, Мощность
mmg150s120b6tn.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник
mmg150s120b6tn.pdf База данных, Инновации, ИМС, Транзисторы
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