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MMG150S120B6UC 1200V 150A IGBT Module August 2019 Version 01 RoHS Compliant PRODUCT FEATURES IGBT chip in trench FS-technology Low switching losses VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Temperature sense included APPLICATIONS Welding Machine Power Supplies Others IGBT-inverter ABSOLUTE MAXIMUM RATINGS(T =25 C unless otherwise specified) C Symbol Parameter/Test Conditions Values Unit VCES TJ=25 1200 Collector Emitter Voltage V VGES Gate Emitter Voltage 20 TC=25 ,TJmax=175 238 IC DC Collector Current TC=100 ,TJmax=175 150 A ICM Repetitive Peak Collector Current tp=1ms 300 Ptot TC=25 ,TJmax=175 1000 W Power Dissipation Per IGBT Diode-inverter ABSOLUTE MAXIMUM RATINGS (T =25 C unless otherwise spe

 

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 mmg150s120b6uc.pdf Проектирование, MOSFET, Мощность

 mmg150s120b6uc.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник

 mmg150s120b6uc.pdf База данных, Инновации, ИМС, Транзисторы

 

 

 


 
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