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Preliminary-MEE4298HT N-Channel 100V(D-S) MOSFET GENERAL DESCRIPTION FEATURES The MEE4298HT is a N-Channel enhancement mode power field effect RDS(ON) 8m @VGS=10V transistor, using Force-MOS patented Extended Trench Gate (ETG) Super high density cell design for extremely low RDS(ON) technology. This advanced technology is especially tailored to minimize Exceptional on-resistance and maximum DC current on state resistance and gate charge, and enhance avalanche capability. capability These devices are particularly suited for medium voltage application such as charger, adapter, notebook computer power management and other APPLICATIONS Power Management lighting dimming powered circuits, and low in-line power loss that are Synchronous Rectification needed in a very small outline surface mount package. Load Switch PIN CONFIGURATION (TO-220

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 mee4298ht.pdf Проектирование, MOSFET, Мощность

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