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Preliminary-MEE4298T N-Channel 100V(D-S) MOSFET GENERAL DESCRIPTION FEATURES The MEE4298T is a N-Channel enhancement mode power field effect RDS(ON) 8m @VGS=10V transistor, using Force-MOS patented Extended Trench Gate (ETG) RDS(ON) 11.5m @VGS=4.5V technology. This advanced technology is especially tailored to minimize Super high density cell design for extremely low RDS(ON) on state resistance and gate charge, and enhance avalanche capability. Exceptional on-resistance and maximum DC current These devices are particularly suited for medium voltage application such capability as charger, adapter, notebook computer power management and other lighting dimming powered circuits, and low in-line power loss that are APPLICATIONS Power Management needed in a very small outline surface mount package. Synchronous Rectification PIN CONFIGURATI