Скачать даташит для 2n6798u:

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax (978) 689-0803 Website http //www.microsemi.com N-CHANNEL MOSFET Qualified per MIL-PRF-19500/557 DEVICES LEVELS JAN 2N6798 2N6798U JANTX JANTXV ABSOLUTE MAXIMUM RATINGS (TC = +25 C unless otherwise noted) Parameters / Test Conditions Symbol Value Unit Drain Source Voltage VDS 200 Vdc Gate Source Voltage VGS 20 Vdc Continuous Drain Current ID1 5.5 Adc TC = +25 C Continuous Drain Current ID2 3.5 Adc TC = +100 C (1) Max. Power Dissipation Ptl 25 W (2) Drain to Source On State Resistance Rds(on) 0.4 Operating & Storage Temperature Top, Tstg -55 to +150 C Note (1) Derated Linearly by 0.2 W/ C for TC > +25 C (2) VGS = 10Vdc, ID = 3.5A TO-205AF (formerly TO-39) ELECTRICAL CHARACTERISTICS (TA = +25 C, unless otherwise noted