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APT15GP60BDL(G) 600V, 15A, VCE(ON) = 2.2V Typical Resonant Mode Combi IGBT The POWER MOS 7 IGBT used in this resonant mode combi is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. Features Typical Applications G Low Conduction Loss SSOA Rated Induction Heating C E Low Gate Charge RoHS Compliant Welding C Ultrafast Tail Current shutoff Medical G Low forward Diode Voltage (VF) High Power Telecom E Ultrasoft Recovery Diode Resonant Mode Phase Shifted Bridge MAXIMUM RATINGS All Ratings TC = 25 C unless otherwise specified. Symbol Parameter UNIT Ratings VCES Collector-Emitter Voltage 600 Volts VGE Gate-Emitter Voltage