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MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BC489/D High Current Transistors NPN Silicon BC489,A,B COLLECTOR 1 2 BASE 3 EMITTER MAXIMUM RATINGS 1 2 Rating Symbol Value Unit 3 Collector Emitter Voltage VCEO 80 Vdc CASE 29 04, STYLE 17 Collector Base Voltage VCBO 80 Vdc TO 92 (TO 226AA) Emitter Base Voltage VEBO 5.0 Vdc Collector Current Continuous IC 0.5 Adc Total Device Dissipation @ TA = 25 C PD 625 mW Derate above 25 C 5.0 mW/ C Total Device Dissipation @ TC = 25 C PD 1.5 Watt Derate above 25 C 12 mW/ C Operating and Storage Junction TJ, Tstg 55 to +150 C Temperature Range THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RqJA 200 C/W Thermal Resistance, Junction to Case RqJC 83.3 C/W ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted) Characteri