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MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF183/D The RF MOSFET Line RF Power MRF183 Field Effect Transistors MRF183S N Channel Enhancement Mode Lateral MOSFETs Designed for broadband commercial and industrial applications at frequen- cies to 1.0 GHz. The high gain and broadband performance of these devices 45 W, 1.0 GHz makes ithem ideal for large signal, common source amplifier applications in 28 LATERAL N CHANNEL BROADBAND volt base station equipment. RF POWER MOSFETs Guaranteed Performance at 945 MHz, 28 Volts Output Power 45 Watts PEP Power Gain 11.5 dB Efficiency 33% IMD 28 dBc D Characterized with Series Equivalent Large Signal Impedance Parameters S Parameter Characterization at High Bias Levels CASE 360B 01, STYLE 1 Excellent Thermal Stability (MRF183) 100% Tested for Load Mi