Скачать даташит для mtp10n40erev0x:

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP10N40E/D Designer's Data Sheet MTP10N40E TMOS E-FET. High Energy Power FET N Channel Enhancement Mode Silicon Gate TMOS POWER FET This advanced high voltage TMOS E FET is designed to 10 AMPERES withstand high energy in the avalanche mode and switch efficiently. 400 VOLTS This new high energy device also offers a drain to source diode RDS(on) = 0.55 OHMS with fast recovery time. Designed for high voltage, high speed switching applications such as power supplies, PWM motor controls and other inductive loads, the avalanche energy capability is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients. Avalanche Energy Capability Specified at Elevated D Temperature Low Stored G