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http //www.ncepower.com NCE40P25G NCE P-Channel Enhancement Mode Power MOSFET Description The NCE40P25G uses uses advanced trench technology to General Features provide excellent R , This device is suitable for use as a load V =-40V,I =-25A DS(ON) DS D switch or power management. R =11.5m (typical) @ V =10V DS(ON) GS R =18.5m (typical) @ V =4.5V Application DS(ON) GS DC/DC Converter High density cell design for ultra low Rdson Ideal for high-frequency switching and synchronous Very low on-resistance R DS(on) rectification Good stability and uniformity with high E AS 150 C operating temperature 100% UIS TESTED! Pb-free lead plating 100% Vds TESTED! DFN 5X6 Top View Bottom View Schematic Diagram Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity NCE40P25G NCE40P25G D