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NCEP015NH30GU http //www.ncepower.com NCE N-Channel Super Trench III Power MOSFET Description General Features The NCEP015NH30GU uses Super Trench III technology V =30V,I =189A DS D that is uniquely optimized to provide the most efficient high R =1.25m (typical) @ V =10V DS(ON) GS frequency switching performance. Both conduction and R =1.7m (typical) @ V =4.5V DS(ON) GS switching power losses are minimized due to an extremely low Excellent gate charge x R product(FOM) DS(on) combination of R and Q . This device is ideal for DS(ON) g Very low on-resistance R DS(on) high-frequency switching and synchronous rectification. 150 C operating temperature Application Pb-free lead plating DC/DC Converter 100% UIS TESTED! Ideal for high-frequency switching and synchronous 100% Vds TESTED! rectification PDFN 5X6-8L Top View Schematic Dia

 

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 ncep015nh30gu.pdf Проектирование, MOSFET, Мощность

 ncep015nh30gu.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник

 ncep015nh30gu.pdf База данных, Инновации, ИМС, Транзисторы

 

 

 


 
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