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MJE13003 SWITCHMODEt Series NPN Silicon Power Transistor These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE applications http //onsemi.com such as Switching Regulators, Inverters, Motor Controls, Solenoid/Relay drivers and Deflection circuits. 1.5 AMPERES Features NPN SILICON POWER Reverse Biased SOA with Inductive Loads @ TC = 100_C TRANSISTORS Inductive Switching Matrix 0.5 to 1.5 A, 25 and 100_C 300 AND 400 VOLTS tc @ 1 A, 100_C is 290 ns (Typ) 700 V Blocking Capability 40 WATTS SOA and Switching Applications Information Pb-Free Package is Available* MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO(sus) 400 Vdc TO-225 Collector-Emitter Voltag