Скачать даташит для ngtg15n120fl2wg:

NGTG15N120FL2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. http //onsemi.com Features Extremely Efficient Trench with Field Stop Technology 15 A, 1200 V TJmax = 175 C VCEsat = 2.0 V Optimized for High Speed Switching Eoff = 0.37 mJ 10 ms Short Circuit Capability These are Pb-Free Devices C Typical Applications Solar Inverter Uninterruptible Power Inverter Supplies (UPS) G Welding ABSOLUTE MAXIMUM RATINGS E Rating Symbol Value Unit Collector-emitter voltage VCES 1200 V Collector current IC A @ TC = 25 C 30 @ TC = 100 C 15 Pulsed collector cu