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MOSFET - Power, Single N-Channel 80 V, 50 mW, 14 A NVTFS6H888NL Features www.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX NVTFS6H888NLWF - Wettable Flanks Product AEC-Q101 Qualified and PPAP Capable 50 mW @ 10 V 80 V 14 A These Devices are Pb-Free and are RoHS Compliant 67 mW @ 4.5 V MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) Parameter Symbol Value Unit N-Channel Drain-to-Source Voltage VDSS 80 V D (5 - 8) Gate-to-Source Voltage VGS 20 V Continuous Drain TC = 25 C ID 14 A Current RqJC TC = 100 C 10 G (4) (Notes 1, 2, 3, 4) Steady State Power Dissipation TC = 25 C PD 23 W RqJC (Notes 1, 2, 3) S (1, 2, 3) TC = 100 C 12 Continuous Drain TA = 25 C ID 4.9 A MARKING Current RqJA TA = 100 C