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Power Transistors 2SA1096, 2SA1096A Silicon PNP epitaxial planar type For low-frequency power amplification Unit mm 8.0+0.5 0.1 3.2 0.2 Complementary to 2SC2497, 2SC2497A 3.16 0.1 Features Output of 5 W can be obtained by a complementary pair with 2SC2497 and 2SC2497A TO-126B package which requires no insulation plate for installa- tion to the heat sink Absolute Maximum Ratings Ta = 25 C Parameter Symbol Rating Unit 0.75 0.1 0.5 0.1 Collector-base voltage (Emitter open) VCBO -70 V 0.5 0.1 1.76 0.1 4.6 0.2 2.3 0.2 2SA1096 VCEO -50 V Collector-emitter voltage 1 Emitter (Base open) 2SA1096A -60 2 Collector 1 2 3 3 Base Emitter-base voltage (Collector open) VEBO -5 V TO-126B-A1 Package Collector current IC -2 A Peak collector current ICP -3 A Collector power dissipation PC 1.2 W Junction temperature Tj 150 C Storage