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Transistor 2SA1806 Silicon PNP epitaxial planer type For high speed switching Unit mm 1.6 0.15 0.4 0.8 0.1 0.4 Features High-speed switching. Low collector to emitter saturation voltage VCE(sat). 1 SS-Mini type package, allowing downsizing of the equipment 3 and automatic insertion through the tape packing and the maga- zine packing. 2 Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit 0.2 0.1 Collector to base voltage VCBO 15 V Collector to emitter voltage VCEO 15 V Emitter to base voltage VEBO 4 V Peak collector current ICP 100 mA 1 Base 2 Emitter EIAJ SC 75 Collector current IC 50 mA 3 Collector SS Mini Type Package Collector power dissipation PC 125 mW Marking symbol AK Junction temperature Tj 125 C Storage temperature Tstg 55 +125 C Electrical Characteristics (Ta=25 C) Parameter Symbol Conditions m

 

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 2sa1806 e.pdf Проектирование, MOSFET, Мощность

 2sa1806 e.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник

 2sa1806 e.pdf База данных, Инновации, ИМС, Транзисторы

 

 
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