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DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D100 BD135; BD137; BD139 NPN power transistors 1999 Apr 12 Product specification Supersedes data of 1997 Mar 04 Philips Semiconductors Product specification NPN power transistors BD135; BD137; BD139 FEATURES PINNING High current (max. 1.5 A) PIN DESCRIPTION Low voltage (max. 80 V). 1 emitter 2 collector, connected to metal part of APPLICATIONS mounting surface 3 base Driver stages in hi-fi amplifiers and television circuits. DESCRIPTION handbook, halfpage NPN power transistor in a TO-126; SOT32 plastic 2 package. PNP complements BD136, BD138 and BD140. 3 1 MAM254 Top view 1 2 3 Fig.1 Simplified outline (TO-126; SOT32) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open e