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DISCRETE SEMICONDUCTORS DATA SHEET k, halfpage M3D088 MMBT2222A NPN switching transistor Product specification 2000 Apr 11 Philips Semiconductors Product specification NPN switching transistor MMBT2222A FEATURES PINNING High current (max. 600 mA) PIN DESCRIPTION Low voltage (max. 40 V). 1 base 2 emitter APPLICATIONS 3 collector Switching and linear amplification. DESCRIPTION handbook, halfpage 3 NPN switching transistor in a SOT23 plastic package. 3 PNP complement PMBT2907A. 1 MARKING 2 TYPE NUMBER MARKING CODE(1) 1 2 MMBT2222A 7C Top view MAM255 Note 1. = p made in Hong Kong. Fig.1 Simplified outline (SOT23) and symbol. = t made in Malaysia. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter - 75 V VCEO