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Preliminary Datasheet RJH1CV6DPQ-E0 R07DS0524EJ0300 1200 V - 30 A - IGBT Rev.3.00 Application Inverter Nov 21, 2011 Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 30 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode (trr = 100 ns typ.) in one package Trench gate and thin wafer technology High speed switching tf = 200 ns typ. (at VCC = 600 V, VGE = 15 V, IC = 30 A, Rg = 5 , Ta = 25 C, inductive load) Outline RENESAS Package code PRSS0003ZE-A (Package name TO-247) C 4 1. Gate 2. Collector G 3. Emitter 4. Collector 1 2 E 3 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to emitter voltage / diode reverse voltage VCES / VR 1200 V Gate to emitter voltage VGES 30 V Collector current Tc = 25 C IC 60 A Tc