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Preliminary Datasheet RJP60F0DPE R07DS0540EJ0100 600 V - 25 A - IGBT Rev.1.00 High Speed Power Switching Sep 09, 2011 Features Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (at IC = 25 A, VGE = 15V, Ta = 25 C) Trench gate and thin wafer technology High speed switching tf = 90 ns typ. (at IC = 30 A, VCE = 400 V, VGE = 15 V, Rg = 5 , Ta = 25 C, inductive load) Outline RENESAS Package code PRSS0004AE-B (Package name LDPAK (S)-(1) ) C 4 1. Gate 2. Collector G 3. Emitter 1 2 4. Collector 3 E Absolute Maximum Ratings (Tc = 25 C) Item Symbol Ratings Unit Collector to emitter voltage VCES 600 V Gate to emitter voltage VGES 30 V Collector current Tc = 25 C IC Note1 50 A Tc = 100 C IC Note1 25 A Collector peak current ic(peak) Note1 100 A Collector dissipation PC 122 W Junction to case thermal impedan

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