Скачать даташит для rjh1cv5dpq-e0:

Preliminary Datasheet RJH1CV5DPQ-E0 R07DS0523EJ0500 1200V - 25A - IGBT Rev.5.00 Application Inverter Jun 12, 2012 Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 25 A, VGE = 15 V, Ta = 25 C) Built-in fast recovery diode (trr = 170 ns typ.) in one package Trench gate and thin wafer technology High speed switching tf = 165 ns typ. (at VCC = 600 V, VGE = 15 V, IC = 25 A, Rg = 5 , Ta = 25 C, inductive load) Outline RENESAS Package code PRSS0003ZE-A (Package name TO-247) C 4 1. Gate 2. Collector G 3. Emitter 4. Collector 1 2 E 3 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to emitter voltage / diode reverse voltage VCES / VR 1200 V Gate to emitter voltage VGES 30 V Collector current Tc = 25 C IC 50 A Tc