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Preliminary www.DataSheet4U.com RJH60F5DPK Silicon N Channel IGBT REJ03G1836-0100 Rev.1.00 High Speed Power Switching Oct 13, 2009 Features High speed switching Low on-state voltage Fast recovery diode Outline RENESAS Package code PRSS0004ZE-A (Package name TO-3P) C 4 1. Gate 2. Collector G 3. Emitter 4. Collector (Flange) 1 2 3 E Absolute Maximum Ratings (Tc = 25 C) Item Symbol Ratings Unit Collector to emitter voltage VCES 600 V Gate to emitter voltage VGES 30 V Collector current Tc = 25 C IC 80 A Tc = 100 C IC 40 A Collector peak current ic(peak) Note1 160 A Collector to emitter diode forward peak current iDF(peak) Note2 100 A Collector dissipation PC 260.4 W Junction to case thermal impedance (IGBT) j-c 0.48 C/W Junction to case thermal impedance (Diode) j-c 2.0 C/W Junction temperature Tj 150 C S