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Preliminary Datasheet RJP30H2DPK-M0 / RJP30H2A R07DS0467EJ0200 Silicon N Channel IGBT Rev.2.00 High speed power switching Jun 15, 2011 Features Trench gate and thin wafer technology (G6H-II series) Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ High speed switching tf = 100 ns typ, tf = 180 ns typ Low leak current ICES = 1 A max Outline RENESAS Package code PRSS0004ZH-A (Package name TO-3PSG) C 4 1. Gate 2. Collector G 3. Emitter 4. Collector (Flange) 1 2 3 E Absolute Maximum Ratings www.DataSheet.co.kr (Ta = 25 C) Item Symbol Ratings Unit Collector to Emitter voltage VCES 360 V Gate to Emitter voltage VGES 30 V Collector current Ic 35 A Collector peak current ic(peak) Note1 250 A Collector dissipation PC Note2 60 W Junction to case thermal impedance j-c 2.08 C/ W Junction temperature Tj 150