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Preliminary Datasheet RJP6065DPM R07DS0204EJ0100 Silicon N Channel IGBT Rev.1.00 High Speed Power Switching Nov 19, 2010 Features Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (IC = 40 A, VGE = 15V, Ta = 25 C) Gate to emitter voltage rating 30 V Pb-free lead plating and chip bonding Outline RENESAS Package code PRSS0003ZA-A (Package name TO-3PFM) C 1. Gate 2. Collector G 3. Emitter E 1 2 3 Absolute Maximum Ratings (Tc = 25 C) Item Symbol Ratings Unit Collector to emitter voltage VCES 630 V Gate to emitter voltage VGES 30 V Collector current Ic Note1 40 A Collector peak current ic(peak) Note1 100 A Collector dissipation PC 50 W Junction to case thermal impedance j-c 2.5 C/W Junction temperature Tj 150 C Storage temperature Tstg 55 to +150 C Notes 1. Pulse width limited by safe operat