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Preliminary Datasheet RJP60D0DPE R07DS0172EJ0100 Silicon N Channel IGBT Rev.1.00 High Speed Power Switching Nov 15, 2010 Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (IC = 22 A, VGE = 15 V, Ta = 25 C) Gate to emitter voltage rating 30 V Pb-free lead plating and chip bonding Outline RENESAS Package code PRSS0004AE-B (Package name LDPAK (S)-(1) ) C 4 1. Gate 2. Collector G 3. Emitter 1 2 4. Collecotor 3 E Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to emitter voltage VCES 600 V Gate to emitter voltage VGES 30 V Collector current Tc = 25 C IC 45 A Tc = 100 C IC 22 A Collector peak current ic(peak) Note1 90 A Collector dissipation PC Note2 122 W Junction to case thermal impedance j-c Note2 1.02 C/ W Junction