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Advanced Power MOSFET FEATURES BVDSS = 100 V Logic Level Gate Drive RDS(on) = 0.12 Avalanche Rugged Technology Rugged Gate Oxide Technology ID = 10.7 A Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 100V Lower RDS(ON) 0.101 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Source Voltage V 100 Continuous Drain Current (TC=25oC) 10.7 ID A o Continuous Drain Current (TC=100 C) 7.5 IDM Drain Current-Pulsed 1 49 A O VGS Gate-to-Source Voltage _ V 2 EAS Single Pulsed Avalanche Energy 228 mJ O IAR Avalanche Current 1 10.7 A O EAR Repetitive Avalanche Energy 1 3.6 mJ O 3 dv/dt Peak Diode Recovery dv/dt 6.5 V/ns O Total Power Dissipation (TC=25 oC) 36 W PD o Linear Derating Factor C 0.2