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KSR1205 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION (Bias Resistor Built In) TO-92S Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1 =4.7 , R2=10 ) Complement to KSR2205 ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit V Collector-Base Voltage VCBO 50 V Collector-Emitter Voltage VCEO 50 V Emitter-Base Voltage VEBO 10 mA Collector Current IC 100 mW Collector Dissipation PC 300 Junction Temperature TJ 150 Storage Temperature TSTG -55 150 1. Emitter 2. Collector 3. Base ELECTRICAL CHARACTERISTICS (T =25 ) A Characteristic Symbol Test Conditions Min Typ Max Unit V Collector-Base Breakdown Voltage BVCBO IC=10 , IE=0 50 V Collector-Emitter Breakdown Voltage BVCEO IC=100 , IB=0 50 VCB=40V, IE=0 Collector Cut-off Current ICBO 0.1 VCE=5V, IC=5mA DC Current Gain hFE 30 IC=

Ключевые слова - ALL TRANSISTORS DATASHEET

 ksr1205.pdf Проектирование, MOSFET, Мощность

 ksr1205.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник

 ksr1205.pdf База данных, Инновации, ИМС, Транзисторы