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Ordering number ENN1048C PNP/NPN Epitaxial Planar Silicon Transistors 2SA1252/2SC3134 High VEBO, AF Amp Applications Features Package Dimensions High VEBO. unit mm Wide ASO and high durability against breakdown. 2018B [2SA1252/2SC3134] 0.4 0.16 3 0 to 0.1 1 0.95 0.95 2 1.9 2.9 1 Base 2 Emitter ( ) 2SA1252 3 Collector SANYO CP Specifications Absolute Maximum Ratings at Ta = 25 C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO ( )60 V Collector-to-Emitter Voltage VCEO ( )50 V Emitter-to-Base Voltage VEBO ( )15 V Collector Current IC ( )150 mA Collector Current (Pulse) ICP ( )300 mA Collector Dissipation PC 200 mW Junction Temperature Tj 125 C Storage Temperature Tstg 55 to +125 C Electrical Characteristics at Ta = 25 C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Cur