Скачать даташит для 2sa1813:

Ordering number EN3972 PNP Epitaxial Planar Silicon Transistor 2SA1813 Low-Frequency General-Purpose Amplifier Driver, Muting Circuit Applications Features Package Dimensions Very small-sized package permitting 2SA1813- unit mm applied sets to be made smaller and slimmer. 2059A Adoption of FBET process. [2SA1813] High DC current gain (hFE=500 to 1200). Low collector-to-emitter saturation voltage (VCE(sat) 0.3V). High VEBO (VEBO 15V). 1 Base 2 Emitter 3 Collector SANYO MCP Specifications Absolute Maximum Ratings at Ta = 25 C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 30 V Collector-to-Emitter Voltage VCEO 25 V Emitter-to-Base Voltage VEBO 15 V Collector Current IC 150 mA Collector Current (Pulse) ICP 300 mA Base Current IB 30 mA Collector Dissipation PC Mounted on board 200 mW