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Ordering number EN1049D PNP/NPN Epitaxial Planar Silicon Transistors 2SA1253/2SC3135 High-hFE, AF Amp Applications Features Package Dimensions High VEBO. unit mm Wide ASO and high durability against breakdown. 2033 [2SA1253/2SC3135] B Base C Collector E Emitter ( ) 2SA1253 SANYO SPA Specifications Absolute Maximum Ratings at Ta = 25 C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO ( )60 V Collector-to-Emitter Voltage VCEO ( )50 V Emitter-to-Base Voltage VEBO ( )15 V Collector Current IC ( )200 mA Collector Current (Pulse) ICP ( )400 mA Collector Dissipation PC 250 mW Junction Temperature Tj 150 C Storage Temperature Tstg 55 to +150 C Electrical Characteristics at Ta = 25 C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current ICBO VCB=( )40V, IE=0 ( )0.1 A Emitt