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www.DataSheet.co.kr Ordering number EN8623 2SK3094 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device 2SK3094 Applications Features High-speed switching. Low ON-resistance. 15V drive. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 400 V Gate-to-Source Voltage VGSS 30 V Drain Current (DC) ID 5.5 A Drain Current (Pulse) IDP 22 A Allowable Power Dissipation PD Tc=25 C55 W Channel Temperature Tch 150 C Storage Temperature Tstg --55 to +150 C Electrical Characteristics at Ta=25 C Ratings Parameter Symbol Conditions Unit min typ max Drain-to-Source Breakdown Voltage V(BR)DSS ID=1mA, VGS=0V 400 V Zero-Gate Voltage Drain Current IDSS VDS=320V, VGS=0V 1.0 mA Gate-to-Source Leakage Current IGSS VGS= 30V, VDS=0V 100 nA Cutoff Vo