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MMBT2222AW NPN Silicon General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-323 FEATURE Complementary PNP Type Available(MMBT2907AW) A L Epitaxial Planar Die Construction 3 3 Ideal for Medium Power Amplification and Switching Top View C B 1 1 2 2 K E D MARKING CODE H J F G MMBT2222AW = K3P, 1P Millimeter Millimeter REF. REF. Min. Max. Min. Max. A 1.80 2.20 G 0.100 REF. B 1.80 2.45 H 0.525 REF. C 1.15 1.35 J 0.08 0.25 D 0.80 1.10 K - - E 1.20 1.40 L 0.650 TYP. F 0.20 0.40 ABSOLUTE MAXIMUM RATINGS at Ta = 25 C Parameter Symbol Ratings Unit Collector to Base Voltage VCBO 75 V Collector to Emitter Voltage VCEO 40 V Emitter to Base Voltage VEBO 6 V Collector Currrent IC 600 mA Total Power Dissipation PC 200 mW Junction, Storage Temperature TJ, TSTG +1