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March 2014 BVDSS = 650 V RDS(on) typ HFS10N65S ID = 9.5 A 650V N-Channel MOSFET TO-220F FEATURES 1 Originative New Design 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 29 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) GS=10V 100% Avalanche Tested Absolute Maximum Ratings TC=25 unless otherwise specified Symbol Parameter Value Units VDSS Drain-Source Voltage 650 V ID Drain Current Continuous (TC = 25 9.5* A Drain Current Continuous (TC = 100 5.7* A IDM Drain Current Pulsed (Note 1) 38* A VGS Gate-Source Voltage 30 V EAS Single Pulsed Avalanche Energy (Note 2) 700 mJ IAR Avalanche Current (Note 1) 9.2 A EAR Repetitive Avalanche Energy (Note 1)