Скачать даташит для mmbtsc1623o_mmbtsc1623y_mmbtsc1623g_mmbtsc1623l:

MMBTSC1623 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications The transistor is subdivided into four groups, O, Y, G and L, according to its DC current gain SOT-23 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage VCBO 60 V Collector Emitter Voltage VCEO 50 V Emitter Base Voltage VEBO 5 V Collector Current IC 100 mA Power Dissipation Ptot 200 mW O Junction Temperature Tj 150 C O Storage Temperature Range TS - 55 to + 150 C O Characteristics at Ta = 25 C Parameter Symbol Min. Typ. Max. Unit DC Current Gain at VCE = 6 V, IC = 1 mA Current Gain Group O hFE 90 - 180 - Y hFE 135 - 270 - G hFE 200 - 400 - L hFE 300 - 600 - Collector Base Breakdown Voltage V(BR)CBO 60 - - V at IC = 100 A Collector Emitter Breakdown Voltage V(BR)CEO 50 - - V at IC = 1 mA