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BD135T / BD137T / BD139T NPN SILICON EPITAXIAL POWER TRANSISTOR These devices are designed as Audio Amplifier and Drivers Utilizing. E C B TO-126 Plastic Package O Absolute Maximum Ratings (Ta=25 C) Value Parameter Symbol Unit BD135T BD137T BD139T Collector Emitter Voltage VCEO 45 60 80 V Collector Emitter Voltage ( RBE = 1 K ) VCER 45 60 100 V Collector Base Voltage VCBO 45 60 100 V Emitter Base Voltage VEBO 5 V Collector Current - Continuous IC 1.5 A Collector Current - Peak 1) ICM 2 Base Current - Continuous IB 0.5 A O Total Power Dissipation @ TA=25 C 1.25 W PD O O Derate above 25 C 10 mW/ C O Total Power Dissipation @ TC=25 C 12.5 W PD O O Derate above 25 C 100 mW/ C O Total Power Dissipation @ TC=70 C PD 8 W O Operating and Storage Junction Temperature Range Tj, Tstg -55 to +150 C O R JA Thermal Resistance, Junctio