Скачать даташит для ss8050lt1:

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors SS8050LT1 TRANSISTOR (NPN) SOT-23 1. BASE 2. EMITTER FEATURES 3. COLLECTOR Power dissipation 2. 4 PCM 0.3 W ( Tamb=25 ) 1. 3 Collector current ICM 1.5 A Collector-base voltage V(BR)CBO 25 V Operating and storage junction temperature range Unit mm TJ, Tstg -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V 25 V (BR)CBO Ic= 100 A, I =0 E Collector-emitter breakdown voltage V Ic= 0.1mA, I =0 20 V (BR)CEO B Emitter-base breakdown voltage V 5 V (BR)EBO I =100 A, I =0 E C Collector cut-off current ICBO VCB=25V, IE=0 0.1 A Collector cut-off current I V=0 0.1 CEO CE=20V, IE A Emitter cut-off current I V =