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PNP Silicon Switching Transistor SMBT 3906 High DC current gain 0.1 mA to 100 mA Low collector-emitter saturation voltage Complementary type SMBT 3904 (NPN) Type Marking Ordering Code Pin Configuration Package1) (tape and reel) 1 2 3 SMBT 3906 s2A Q68000-A4417 B E C SOT-23 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCE0 40 V Collector-base voltage VCB0 40 Emitter-base voltage VEB0 5 Collector current IC 200 mA Total power dissipation, TS =71 C Ptot 330 mW Junction temperature Tj 150 C Storage temperature range Tstg 65 + 150 Thermal Resistance Junction - ambient2) Rth JA 310 K/W Junction - soldering point Rth JS 240 1) For detailed information see chapter Package Outlines. 2) Package mounted on epoxy pcb 40 mm 40 mm 1.5 mm/6 cm2 Cu. 5.91 Semiconductor Group 1 SMBT 3906 Electrical Characteristics at T