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2SC3138 TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process) 2SC3138 High Voltage Switching Applications Unit mm High voltage VCBO = 200 V (max) V = 200 V (max) CEO Small flat package Complementary to 2SA1255 Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 200 V Collector-emitter voltage VCEO 200 V Emitter-base voltage VEBO 5 V Collector current IC 50 mA Base current IB 20 mA Collector power dissipation PC 150 mW Junction temperature Tj 125 C JEDEC TO-236MOD Storage temperature range Tstg -55 125 C JEITA SC-59 Marking TOSHIBA 2-3F1A Weight 0.012 g (typ.) 1 2003-03-27 2SC3138 Electrical Characteristics (Ta = = 25 C) = = Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 200 V, IE = 0 0.1 A Emitter c