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2SK3569 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSVI) 2SK3569 Switching Regulator Applications Unit mm Low drain-source ON-resistance RDS (ON) = 0.54 (typ.) High forward transfer admittance Yfs = 8.5 S (typ.) Low leakage current IDSS = 100 A (max) (VDS = 600 V) Enhancement mode Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 600 V Drain-gate voltage (RGS = 20 k ) VDGR 600 V Gate-source voltage VGSS 30 V 1 Gate DC (Note 1) ID 10 2 Drain Drain current A 3 Source Pulse (t = 1 ms) IDP 40 (Note 1) Drain power dissipation (Tc = 25 C) JEDEC PD 45 W Single pulse avalanche energy JEITA SC-67 EAS 363 mJ (Note 2) TOSHIBA 2-10U1B Avalanche current IAR 10 A Weight 1.7 g (typ.) Repetitive ava