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T2N7002BK MOSFETs Silicon N-Channel MOS T2N7002BK T2N7002BK T2N7002BK T2N7002BK 1. Applications 1. Applications 1. Applications 1. Applications High-Speed Switching 2. Features 2. Features 2. Features 2. Features (1) ESD(HBM) level 2 kV (2) Low drain-source on-resistance RDS(ON) = 1.05 (typ.) (@VGS = 10 V) RDS(ON) = 1.15 (typ.) (@VGS = 5.0 V) RDS(ON) = 1.2 (typ.) (@VGS = 4.5 V) 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 1 Gate 2 Source 3 Drain SOT23 Start of commercial production 2015-05 2015-2017 2017-11-30 1 Toshiba Electronic Devices & Storage Corporation Rev.2.0 T2N7002BK 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) 4.