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TGH40N65F2DS Field Stop Trench IGBT Features TO-247 650V Field Stop Trench IGBT Technology Low Switching Loss for a Wide Temperature Range Positive Temperature Coefficient Easy Parallel Operation RoHS Compliant JEDEC Qualification 175 Operating Temperature G C E Applications UPS, Inverter, Solar, Welder Device Package Marking Remark TGH40N65F2DS TO-247 TGH40N65F2DS RoHS Absolute Maximum Ratings Parameter Symbol Value Unit Collector-Emitter Voltage VCES 650 V Gate-Emitter Voltage VGES 20 V TC = 25 80 A Continuous Collector Current IC TC = 100 40 A Pulsed Collector Current (Note 1) ICM 120 A Diode Continuous Forward Current TC = 100 IF 40 A Diode Pulsed Forward Current (Note 2) IFM 200 A TC = 25 283 W Power Dissipation PD TC = 100 142 W Operating Junction Temperature Tvj -55 175 Storage Tempera

 

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 tgh40n65f2ds.pdf Проектирование, MOSFET, Мощность

 tgh40n65f2ds.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник

 tgh40n65f2ds.pdf База данных, Инновации, ИМС, Транзисторы

 

 
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