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P1504HV Dual N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 23m @VGS = 10V 40V 7A 100% UIS tested SOP-8 100% Rg tested ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 40 V VGS Gate-Source Voltage 25 TA = 25 C 7 ID Continuous Drain Current TA= 100 C 4 A IDM 30 Pulsed Drain Current1 IAS Avalanche Current 28 EAS Avalanche Energy L = 0.1 mH 41 mJ TA = 25 C 2 PD Power Dissipation W TA= 100 C 0.8 Tj, Tstg Operating Junction & Storage Temperature Range -55 to 150 C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Lead RqJL 25 C / W Junction-to-Ambient RqJA 62.5 1 Pulse width limited by maximum junction temperature. REV 1.0 1 2014/9/19 P1504HV Dual N-Channel Enhancement Mode