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P1603BD N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 14m @VGS = 10V 30V 40A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage 20 TC= 25 C 40 ID Continuous Drain Current TC= 100 C 32 A IDM 150 Pulsed Drain Current1 IAS Avalanche Current 23 EAS Avalanche Energy L=0.1mH 26 mJ TC= 25 C 42 PD Power Dissipation W TC= 100 C 27 Tj, Tstg Junction & Storage Temperature Range -55 to 150 C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Case RqJC 3 C / W Junction-to-Ambient RqJA 62.5 1 Pulse width limited by maximum junction temperature. REV 1.0 1 2014/5/8 P1603BD N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 C, Unl