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P1603BEBB N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID3 16m @VGS = 10V 30V 24A PDFN 2X2S ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage 20 TC = 25 C 24 TC = 100 C 15 ID Continuous Drain Current3 TA = 25 C 8.2 A TA= 70 C 6.6 IDM 70 Pulsed Drain Current1 IAS Avalanche Current 20.5 EAS Avalanche Energy L = 0.1 mH 21 mJ TC = 25 C 15 TC = 100 C 6.2 PD Power Dissipation W TA= 25 C 1.8 TA= 70 C 1.1 Tj, Tstg Operating Junction & Storage Temperature Range -55 to 150 C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS RqJA 67 Junction-to-Ambient2 C / W Junction-to-Case RqJC 8 1 Pulse width limited by maximum junction temperature. 2 The