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P1603BV N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 30V 16m @VGS = 10V 10A SOP- 08 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VGS Gate-Source Voltage 20 V TA = 25 C 10 ID Continuous Drain Current TA = 70 C 8 A IDM 55 Pulsed Drain Current1 IAS Avalanche Current 23 EAS Avalanche Energy L = 0.1mH 26 mJ TA = 25 C 2.6 PD Power Dissipation W TA = 70 C 1.6 TJ, TSTG Operating Junction & Storage Temperature Range -55 to 150 C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Case RqJC 25 C / W Junction-to-Ambient RqJA 50 1 Pulse width limited by maximum junction temperature. Ver 1.0 1 2012/4/13 P1603BV N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 C, Unless Otherwise No