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UTC 2N3773/2N6099 P O W E R TRANSISTOR COMPLEMENTARY SILICON TRANSISTORS The 2N3773/2N6099 are power-base power transistors designed for high power audio, disk head positions and other linear applications. These device can be used in power switching circuits such as relay or solened drivers, DC to DC converters or inverts. FEATURES *High safe operating area(100 tested) 150W and 100V *Complement Characterized for linear operation TO-3 *High DC Current Gain and low saturation voltage Hfe=15(8A 4V) Vce(sat)=1.4V(Ic=8A,Ib=0.8A) *For Low Distortion Complementary Designs ABSOLUTE MAXIMUM RATINGS ( Ta=25 C ,unless otherwise specified ) PARAMETERS SYMBOL VALUE UNITS Collector-base voltage VCBO 160 V Collector-emitter voltage VCEO 140 V Emitter-base voltage VEBO 7 V Collector-emitter voltage VCEX 160 V Total Power dissipation Pc Tc=25 C 150 W Dertate above 25