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CPV362M4FPbF Vishay High Power Products IGBT SIP Module (Fast IGBT) FEATURES Fully isolated printed circuit board mount package Switching-loss rating includes all tail losses HEXFRED soft ultrafast diodes RoHS COMPLIANT Optimized for medium speed 1 to 10 kHz See fig. 1 for current vs. frequency curve Totally lead (Pb)-free IMS-2 Designed and qualified for industrial level PRODUCT SUMMARY DESCRIPTION OUTPUT CURRENT IN A TYPICAL 5.0 kHz MOTOR DRIVE The IGBT technology is the key to the advanced line of IMS IRMS per phase (3.1 kW total) (Insulated Metal Substrate) power modules. These modules 11 A with TC = 90 C are more efficient than comparable bipolar transistor TJ 125 C modules, while at the same time having the simpler Supply voltage (DC) 360 V gate-drive requirements of the familiar power MOSFET. This Power factor 0.8

 

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 cpv362m4fpbf.pdf Проектирование, MOSFET, Мощность

 cpv362m4fpbf.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник

 cpv362m4fpbf.pdf База данных, Инновации, ИМС, Транзисторы

 

 
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