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IRFP360LC, SiHFP360LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Ultra Low Gate Charge VDS (V) 400 Reduced Gate Drive Requirement Available RDS(on) ( )VGS = 10 V 0.20 Enhanced 30 V VGS Rating RoHS* COMPLIANT Reduced Ciss, Coss, Crss Qg (Max.) (nC) 110 Isolated Central Mounting Hole Qgs (nC) 28 Dynamic dV/dt Rated Qgd (nC) 45 Repetitive Avalanche Rated Configuration Single Compliant to RoHS Directive 2002/95/EC D DESCRIPTION TO-247AC This new series of low charge Power MOSFETs achieve significantly lower gate charge over convertional MOSFETs. Utilizing advanced MOSFETs technology the device improvements allow for reduced gate drive requirements, G faster switching speeds and increased total system savings. These device improvements combined with the proven ruggedness and reliability of MOSFETs offer the designer