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IRFP460B, SiHG460B www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY Optimal Design VDS (V) at TJ max. 550 - Low Area Specific On-Resistance RDS(on) max. at 25 C ( ) VGS = 10 V 0.25 - Low Input Capacitance (Ciss) Qg max. (nC) 170 - Reduced Capacitive Switching Losses Qgs (nC) 14 - High Body Diode Ruggedness Qgd (nC) 28 - Avalanche Energy Rated (UIS) Configuration Single Optimal Efficiency and Operation - Low Cost D - Simple Gate Drive Circuitry - Low Figure-of-Merit (FOM) Ron x Qg TO-247AC - Fast Switching Material categorization For definitions of compliance G please see www.vishay.com/doc?99912 Note * Lead (Pb)-containing terminations are not RoHS-compliant. Exemptions may apply. S S D APPLICATIONS G N-Channel MOSFET Consumer Electronics - Displays (LCD or Plasma TV) Server and Telecom Po